3SK259 ,RF Dual Gate FETsAPPLICATIONS.2.1i0.l. . 1. 2r3c0. 1O Suverior Cross Modulation Performance. (lil'.]')]]'--)--]))--' ..
3SK263 ,N-Channel Silicon MOSFET (Dual Gate) FM Tuner, VHF Tuner, High-Frequency Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3SK274 ,RF Dual Gate FETsAPPLICATIONS. Unit in mmI\III\\III\IIIII\II nA'I'IRIl-l‘ f-r," r-oet2.1+0.1IVIHAIIVIUIVI KAI INUD t ..
3SK284 ,N CHANNEL DUAL GATE MES TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)APPLICATIONS. Unit in mmMAXIMUM RATINGS (Ta = 25°C)CTT A RA CTERIR’FTC SVMROT. RATINC, I TNTT 1. 25 ..
3SK291 ,Field Effect Transistor Silicon N-Channel Dual Gate MOS Type TV Tuner, UHF RF Amplifier ApplicationsApplications Unit: mm Superior cross modulation performance Low reverse transfer capacitanc ..
3SK293 ,N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICAITONS)APPLICATIONS “gm : mm\ mC1-..“ __, --- - MA.ac, J_._1-L_'__A2.1 i0.1Duperlor LII'OSS lVlOQulaElon r ..
51L05C , LOW-DROPOUT VOLTAGE REGULATORS
51MT160KB ,1600V 3 Phase Bridge in a INT-A-Pak packageFeatures55 APackage fully compatible with the industry standard INT-A-pak90 Apower modules series11 ..
520101 , Metric OMNI-BLOK Fuse Block Molded Base Type
5203 ,4A SCRsapplications wherethe available gate current is limited, such as motorcontrol for hand tools, kitch ..
521-1 ,Winfield Corporation - 1.8V LVCMOS Surface Mount Crystal Clock Oscillator
52207-0685 , 1.00mm (.039") Pitch FFC/FPC Connector, SMT, Right Angle, ZIF, Top Contact Style Receptacle, 6 Circuits, Lead-free, High Barrier Packaging
3SK259
RF Dual Gate FETs
TOSHIBA
3SK259
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE
3SIK259
TV TUNER, UHF RF AMPLIFIER APPLICATIONS.
Unit in mm
TV TUNER VHF WIDE BAND RF AMPLIFIER APPLICATIONS.
0 Superior Cross Modulation Performance. J-rs-rs-T-)
0 Low Reverse Transfer Capacitance : Crss=0.025pF (Typ.) o----HC-E, l D
N '-4 4
o Low Noise Figure : NF=2.6dB (Typ.) ei f 1 i ieiil
MAXIMUM RATINGS T =25°C a; A 2 I 3 -1,
( a ) -EE- i D__
CHARACTERISTIC SYMBOL RATING UNIT l _-.
Drain-Source Voltage VDS 13.5 V "i'?,] _-‘- i ii;
Gate l-Source Voltage VGlS i8 V 'r:'''ii,_''''rt.' i i 2
Gate 2-Source Voltage VG2S :8 V l. GATE 1I 1‘ -
. 2. GATE 2 I'
Drain Current ID 30 mA 3. DRAIN c,
Drain Power Dissipation PD 100 mW USQ 4. SOURCE
Chanel Temperature Tch 125 T JEDEC -
Storage Temperature Range Tstg -55--125 T EIAJ -
TOSHIBA 2-2K1B
Weight : 0.006g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate 1 Leakage Current IGISS VD320, VGlS= 16V, Vstzo - - 150 nA
Gate 2 Leakage Current Iggss Vns=0, VG1320, VG2S-- iGV - - :50 nA
. VGlS= -4V, VG2S= -4V
Drain-Source Voltage V (BR) DSX In-- 100p A 13.5 - - V
Drain Current IDSS VDs=6V, VG13=0, VG23=3V 0 - mA
Gate l-Source Cut-off Voltage VG1S(OFF) VDS=6V, VG2S=3V, ID=100PA -1.5 - V
Gate 2-Source Cut-off Voltage VGZS(OFF) vns=6V, VGIs=3V, ID=100pA -1.0 - V
Forward Transfer Admittance |st| 1r,1"=srrf2i,1sttiti" - 21 - mS
Input Capacitance Ciss VDS=6V, VG2S=3V 1.9 2.7 3.5 pl?
Reverse Transfer Capacitance Crss ID=10mA, f=IMHz - 0.025 0.04 pF
Power Gain Gps VDS=6V, VG2S=3V 15 19 - dB
Noise Figure NF ID=10mA, f= 800MHz (Fig.1) - 2.6 4.0 dB
Marking
H2 1:11
l ti 4
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
TOSHIBA 3SK259
INPUTQ SHIELD OUTPUg
RG750 N, I RL R50
T L1 I L3
C L2 F.B _ F.B L4 C
1--20pF 1--20pF -
RFC 14 Hi lOOOpF RFC 2 CASE
ce HP, 1000pF
'th. l
lOOOpF 33$ l 1000pF
" " l ' " '
“a 1000pF 1% i.'ts,
o " o o
O - O O
CD I CD O
H . H H
00:: 0
CQ VG2S VDS
LI-lu : ¢0.8mm SILVER PLATED COPPER WIRE
C : AIR TRIMMER TTA25A200A (MURATA MFG. Co., LTD.)
RFC 1 : ¢0.35mm COPPER WIRE 3mm ID, 7T
RFC 2 : ¢0.35mm COPPER WIRE 3mm ID, 10T
Fig.1 800MHz Gps, NF TEST CIRCUIT
ID - VDS ID - VDS
COMMON COMMON
SOURCE SOURCE VG2s=3.5v
A VG2s--3V A VGlS=3V
E Ta=25°C VG1s=3-5V "fi Ta=25°C 3
0 2 4 6 8 10 0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
TOSHIBA
ID - VGlS
COMMON
SOURCE
VDs=6V
Ta = 25°C
DRAIN CURRENT 10 (mA)
-2 -1 0 l 2
GATE 1-SOURCE VOLTAGE VGlS (V)
lstl - VGlS
COMMON
SOURCE
VDS=6V
Ta = 25°C
Ist[ (m5)
FORWARD TRANSFER ADMITTANCE
-2 -1 0 1 2
GATE 1-SOURCE VOLTAGE les (V)
Gps, NF - VDS
COMMON
SOURCE
ID = 10mA
f= 800MHz Gps
Ta=25°C 3
Vst = 4V
POWER GAIN Gps (dB)
0 2 4 6 8 10
DRAIN-SOURCE VOLTAGE VDS (V)
NOISE FIGURE NF ((15)
DRAIN CURRENT 19 (mA)
DRAIN POWER DISSIPATION P1) (mW)
POWER GAIN Gps (dB)
3SK259
ID - VGZS
COMMON
SOURCE
VDs=6V
Ta = 25'C
- 1 O 1 2 3 4
GATE 2-SOURCE VOLTAGE VGZS (V)
PD - Ta
0 20 4O 60 80 100 120 140
AMBIENT TEMPERATURE Ta (°C)
Gps - VGZS
A BIAS CIRCUIT
_. VDD
o / s? (i',,
-10 I g J,
VDD=6V
(=VDs)+Rx10mA
at VG25=3V
f=800MHz
Ta=25°C
-2 -1 o 1 2 3 4
GATE 2-SOURCE VOLTAGE vas (V)
TOSHIBA
POWER GAIN GPS ((18)
FORWARD TRANSFER SUSCEPTANCE
bfs (mS)
OUTPUT SUSCEPTANCE hos
Gps, NF - f
30 l 6
COMMON SOURCE
VDs=6V '""ss Gps
VG2S=3V "ss
20 ID=10mA "s, 4
Ta=25°C
10 F /// 2
50 100 300 500 1000
FREQUENCY f (MHz)
st - f
FORWARD TRANSFER CONDUCTANCE gfs (mS)
0 4 a 12 16 20 24 28
COMMON SOURCE
VDS = 6V
Vazs = 3V
ID=10mA 0.2
Ta = 25''C I
COMMON SOURCE
VDS = 6V
chs = 3V
ID = 10mA
Ta = 25°C
0.2 0.4 0.6 0.8 1.0
OUTPUT CONDUCTANCE gos (mS)
NOISE FIGURE NF‘ (dB)
INPUT SUSCEPTANCE bie (m8)
-2 0 2 4 6 8
hrs (mS)
REVERSE TRANSFER SUSCEP’I‘ANCE
3SK259
COMMON SOURCE
VDs=6V
VG2s=3V
ID-- 10mA
Ta=25°C
INPUT CONDUCTANCE gig, (mS)
Yrs - f
REVERSE TRANSFER CONDUCTANCE grs (ms)
0 0.04 0.08 0.12 0.16 0.20 0.24 0.28
COMMON SOURCE
VDS -- 6V
VGZS = 4.5V
ID = 10mA
Ta = 25°C
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