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31DQ09NIECN/a4462avai90V 3.3A Schottky Discrete Diode in a DO-201AD package
31DQ10INTERNATIONALN/a1000avai100V 3.3A Schottky Discrete Diode in a DO-201AD package


31DQ09 ,90V 3.3A Schottky Discrete Diode in a DO-201AD packageBulletin PD-2.306 rev. G 12/0331DQ0931DQ10SCHOTTKY RECTIFIER 3.3 AmpMajor Ratings and Charact ..
31DQ10 ,100V 3.3A Schottky Discrete Diode in a DO-201AD packageFeaturesThe 31DQ.. axial leaded Schottky rectifier has been opti-Characteristics 31DQ.. Unitsmized ..
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31DQ09-31DQ10
90V 3.3A Schottky Discrete Diode in a DO-201AD package
Bulletin PD-2.306 rev.G 12/03
Internatigrjol 310009
IézR Rectifier 31DQ1O
SCHOTTKY RECTIFIER 3.3 Amp
Major Ratings and Characteristics Description! Features
. . . The 31DQ.. axial leaded Schottky rectifier has been opti-
Characteristics 31DQ.. Units mized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power sup-
|F(AV) Rectangular 3.3 A plies, converters, free-wheeling diodes, and reverse
waveform battery protection.
VRRM 90/100 v . Low profile, axial leaded outline
. High purity, high temperature epoxy encapsulation for
IFSM @tp = 5 us sine 210 A enhanced mechanical strength and moisture resistance
. Very low forward voltage drop
VF @3Apk,TJ=25°C 0.85 V . High frequency operation
. Guard ring for enhanced ruggedness and long term
TJ -40 to 150 DC reliability
CASE STYLE AND DIMENSIONS mm m ,
21 0 [0,”) MIN.
5.8 (0.23) (2 Pt08]
MAX. DIA. !_
10.0 [0.39)
21.0 (0.83) MIN. 254(01001wu.
(2 PLCS.) FLASH (2 PLCS)
10.0 (0.39) W
MAX, 15091059)
Ns,), /i-i)riritou u L
. it K65)
Ctr) " (0.23)
1 50 (0 059) W ow
1.30 (0.051) tYA.
(2 PLCS.) Outline C - 16
Dimensions in millimeters and inches
1
31DQ09, 31DQ10
International
Bulletin PD-2.306 rev. G 12/03 IEER ReCTIflef
Voltage Ratings
Part number 31DQ09 31DQ10
VR Max. DC Reverse Voltage (V) 90 100
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters 31 DQ.. Units Conditions
lam Max. Average Forward Current 3.3 A 50% duty cycle @ TC = 53.4''C, rectangularwave form
* See Fig. 4
|FSM Max.PeakOneCycle Non-Repetitive 210 5ps Sine or 3ps Rect. pulse Following any rated
. A . load condition and with
Surge Current * See Fig. 6 34 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 3.0 mJ T: = 25 "C, IAS =1.0Amps,L= 6 mH
|AR Repetitive Avalanche Current 0.5 A Current decaying linearlyto zero in 1 psec
Frequency limited by Tu max. VA =15va typical
Electrical Specifications
Parameters 31DQ.. Units Conditions
VFM Max. F0n~ard Voltage Drop 0.85 V @ 3A T = 25 ''C
* See Fig. 1 (1) 0.97 V @ 6A J
0.69 V @ 3A "C
0.80 v @ 6A TJ - 125
IRM Max. Reverse Leakage Current 1 mA T: = 25 °C
. V = rated V
*See Fig.2 (1) 3 mA Tu-- 125°C R R
c, Typical Junction Capacitance 110 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
Ls Typical Series Inductance 9.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters 31 DQ.. Units Conditions
T, Max. Junction Temperature Range -40 to 150 ''C
Tstg Max. Storage Temperature Range -40 to 150 ''C
RthJA Max. Thermal Resistance Junction 80 "C/W DC operation
to Ambient \Mthout cooling fins
RthJL TypicalThermal Resistance Junction 34 °CNV DC operation
to Lead
wt Approximate Weight 1.2 (0.042) g (oz.)
Case Style C - 16

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