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30WQ10FNIRN/a30675avai100V 3.5A Schottky Discrete Diode in a D-Pak package
30WQ10FNTRRIRN/a3000avai100V 3.5A Schottky Discrete Diode in a D-Pak package


30WQ10FN ,100V 3.5A Schottky Discrete Diode in a D-Pak packageFeaturesMajor Ratings and CharacteristicsThe 30WQ10FN surface mount Schottky rectifier has beenChar ..
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30WQ10FN-30WQ10FNTRR
100V 3.5A Schottky Discrete Diode in a D-Pak package
International
GiR Rectifier
Bulletin PD-20523 rev.E 03/03
30WQ1OFN
SCHOTTKYRECTlFIER
Major Ratings and Characteristics
3.5Amp
D-Pak (TO-252AA)
Descriptionl Features
The 30WQ1OFN surface mount Schottky rectifier has been
It,',-::))"")", -
1.15(0.04)
x1. 14 (0.04)
x0. 76 (0. 03)
2.28 (0.09
3x 0.89 (0.03)
0.64 (0.02)
4.57 (0.18)
Conform to JEDEC outline D-Pak (Similar to TO-252AA)
Dimensions in millimeters and (inches) Anode
6.45 (0.24)
5.63 (0.22) 6.48 (0.26)
10.67 (0.42)
5 0.51 (0.02)
= MIN. 2542(010)1}:D:|
Characteristics 30WQ1OFN designed for applications requiring low forward drop and
small foot prints on PC board. Typical applications are in disk
[F(AV) Rectangular 3.5 drives, switching power supplies, converters, free-wheeling
waveform diodes, battery charging, and reverse battery protection.
VRRM 100 I Popular D-PAK outline
. Small foot print, surface mountable
G, @tp=5ps sine 440 . Low forward voltage drop
. High frequency operation
VF @3Apk,To=125oC 0.63 . Guard ring for enhanced ruggedness and long term
reliability
T J -40 to 150
673 (0.26) - 1.14 (0.04)
625 (0.25) - J89 (0.03) MINIMUM RECOMMENDED FOOTPRINT
I 5.46 (0.21) 1_27 (0_05) _0=58 (0.02) 537 (0.24)
l 5.21 (0.20) [0.88 (0.03) 0.46 (0.02)
1/ 4 I
6.22 (0.24)
5.97 (0.23)
. 2.28 (0.09)
0.53 (0.02) 1.65 (0.06) 2x
0.46 (0.02) 2x Base
Cathode

30WQ10FN
Bulletin PD-20523 rev.E 03103
Voltage Ratings
International
IEER Rectifier
Part number 30WQ10FN
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 100
Absolute Maximum Ratings
Parameters 30WQ... Units Conditions
IHAV) Max. Average Forward Current 3.5 A 50% duty cycle @ TC = 135°C, rectangularwave form
* See Fig. 5
|FSM Max. PeakOneCycleNon-Repetitive 440 5ps Sine or Bus Rect. pulse Following .lny rated .
. A .— load condition and with
Surge Current * See Fig. 7 70 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 5.0 mJ T, = 25°C, |As =1Amp,L=10mH
|AR Repetitive Avalanche Current 0.5 A Currentdecaying Iinearlyto zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 30WQ... Units Conditions
. 0.81 V 3A
VFM Max Forward Voltage Drop @ T, = 25 "C
* See Fig. 1 (1) 0.96 V @ GA
0.63 V @ 3A T, =125 "C
0.74 V @ 6A
IRS, Max. Reverse Leakage Current 1 mA T, = 25 "C
. v,, = rated VR
* See Fig. 2 (1) 4.9 mA T, = 125 "C
VF(TO) Threshold Voltage 0.48 V T, = T, max.
rt Forward Slope Resistance 30.89 mil
c, Typical Junction Capacitance 92 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dvldt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse VNMth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 30WQ... Units Conditions
T J Max.JunctionTemperature Range(*) -40to 150 ''C
Tslg Max. Storage Temperature Range MO to 150 "C
Rch Max.ThermalResistanceJunction 4.7 °C/W DC operation *See Fig.4
to Case
wt Approximate Weight 0.3(0.01) g (oz.)
Case Style D- PAK Similarto TO-252AA
(*) dPtot 1 . . . . .
. < _._termal runaway condition for a diode on its own heatsink
de Rth(j-a)

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