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30WQ06FN-30WQ06FNTR
60V 3.5A Schottky Discrete Diode in a D-Pak package
International
I523 Rectifier
SCHOTTKYRECTlFlER
Major Ratings and Characteristics
Bulletin PD-20522 rev.E 03/03
30WQ06FN
3.5Amp
D-Pak (TO-252AA)
Description] Features
Characteristics 30Wt206FN Units The 30WQ06FN surface mount Schottky rectifier has been
designed for applications requiring low forward drop and
|F(AV) Rectangular 3.5 A small foot prints on PC board. Typical applications are in disk
waveform drives, switching power supplies, converters, free-wheeling
V 60 V diodes, battery charging, and reverse battery protection.
RRM . Popular D-PAK outline
IFSM @tp=5ps sine 490 A . Small foot print, surface mountable
. Low forward voltage drop
VF @3Apk, TJ = 125''C 0.53 V . High frequency operation
. Guard ring for enhanced ruggedness and long term
reliabilit
T J -40 to 150 °c y
228 (0.09)
6.73 0.26
( ) 2A9 (0.08) - 1A4 (th04) MINIMUM RECOMMENDED FOOTPRINT
6.35 (0.25) 0.89 (0.03)
- s46_(th21) - 1.27 (0.05) - 0.58 (0.02) 5.97 (0.24)
l 5.21 (020%: 0.38 (0.03) 0.46 (0.02)
t 6.45 (0.24)
5.22 (0.24) 5.50 (0.22) 5.43 (0.25)
I.64 002) 5.97 (0.23) 10.42(0.41) 10.67(0.42)
9.40 (0.37) _.
l I 2 3
i' - l 0.51 (0.02) 2 i F
W) l - I MIN. 2.54 ((0.10) E " t -
1.15 (0.04) I l I T I i' 2.23 (0.09)
IA4 004 -- aw) 0.58 (0.02) 1.65 (0.06) - 2x
2x 1-14-(0-04)d - 0.64 (0.02) -
0.76 (0.03) 0.46 (0.02) 2x Base
1 - Anode Cathode
2.20 (0.09 2 2 - Cathode
2x 3 - Anode l 4, 2
4.57 (0.18) 4 - Cathode
Conform to JEDEC outline D-Pak (Similar to TO-252AA) _ i
Dimensions in millimeters and (inches) C) 1 3
Anode Anode
30WQ06FN
Bulletin PD-20522 rev.E 03103
Voltage Ratings
International
1:212 Rectifier
Part number 30WQO6FN
v,, Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 60
Absolute Maximum Ratings
Parameters 30WQ... Units Conditions
IHAV) Max. Average Forward Current 3.5 A 50% duty cycle @ TC = 133°C, rectangularwave form
* See Fig. 5
|FSM Max. PeakOneCycleNon-Repetitive 490 5ps Sine or 3ps Rect. pulse Following .lny rated .
. A .— load condition and with
Surge Current * See Fig. 7 70 10ms Sine or 6ms Rect. pulse rated VRRM applied
EAS Non-Repetitive Avalanche Energy 6.0 mJ T, = 25°C, |As = 1 Amp, L= 12 mH
I AR Repetitive Avalanche Current 1.0 A Currentdecaying Iinearlyto zero in 1 psec
Frequencylimited by T, max.VA=1.5xVR typical
Electrical Specifications
Parameters 30WQ... Units Conditions
. . 1 V A
VFM Max Forward Voltage Drop 0 6 @ 3 T: = 25 ''C
. See Fig. 1 (1) 0.76 V @ 6A
0.53 V @ 3A T, =125 °C
0.65 V @ 6A
IRM Max. Reverse Leakage Current 2 mA T J = 25 "C
. v,, = rated VR
* See Fig. 2 (1) 30 mA T, = 125 ''C
Vmo) Threshold Voltage 0.38 V T, = T, max.
rt Forward Slope Resistance 34.31 mn
c, Typical Junction Capacitance 145 pF VR = SVDC, (test signal range 100Khz to 1Mhz) 25 "C
LS Typical Series Inductance 5.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse \Mdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 30WQ... Units Conditions
T J Max.Junction Temper. Range (*) -40 to 150 "C
Tslg Max. Storage Temperature Range -40to 150 "C
RthJC Max. Thermal Resistance Junction 4.7 uCNV DC operation * See Fig. 4
to Case
wt Approximate Weight 0.3(0.01) g (oz.)
Case Style D - PAK Similarto TO-252AA
(*) dPtot 1 . . . . .
___. . thermal runaway condition for a diode on its own heatsink
de Rth(j-a)
