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30L6P45TOSHIBAN/a316avaiRECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS)


30L6P45 ,RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS)APPLICATIONS Unit in mmINVERTER EQUIPMENT FOR AC MOTOR CONTROLCHOPPFR FOIIIPMFNT FOR DC MOTOR CONTR ..
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30L6P45
RECTIFIER MODULE SILICON DIFFUSED TYPE ( THREE PHASE FULL WAVE BRIDGE APPLICATIONS)
TOSHIBA 30L6P45
TOSHIBA RECTIFIER MODULE SILICON DIFFUSED TYPE
3016P45
THREE PHASE FULL WAVE BRIDGE APPLICATIONS Unit in mm
INVERTER EQUIPMENT FOR AC MOTOR CONTROL
CHOPPER EQUIPMENT FOR DC MOTOR CONTROL
DC SUPPLY FOR BATTERY
15 i0_315.5i0.3
OTHER POWER CONVERSION EQUIPMENT as S.5NIAX,
_ t ii'C
fa; ie, Q -
E N e.
0 Repetitive Peak Reverse Voltage .' VRRM=800V ELL:-
0 Average Output Rectified Current : Io=3OA (i';
q Isolation Voltage : VIsol=2000V AC 60s -0.gL 4.5
46.2MAX. -
0 Single In-line Package 78MAX
(D © Q) © ©
MAXIMUM RATINGS (Ta = 25°C) lECEEECE
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage VRRM 800 V
Average Output Rectified Current I0 30 A
(Te--9T'C) JEDEC -
EIAJ -
Peak One Cycle Surge Forward I 400 (50Hz) A
Current (Non-Repetitive) FSM 440 (60HZ) TOSHIBA 12-46AIA
Junction Temperature Tj -40--150 T Weight : 24g
Storage Temperature Tstg -40-125 "C CONNECTSN)“ )4( )
Screw Torque (Note 1) - 1.5 Nun
Isolation Voltage(AC, t=60s) V1501 2000 V
Note 1 : Recommended torque 1.2 Nm
ELECTRICAL CHARACTERISTICS (Ta = 25°C) 1 (+) 5 (-)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. MAX. UNIT
Repetitive Peak Reverse IRRM
= - 1 A
Current (Note 2) VRRM 800V 00 '
Peak Forward Voltage (1317;242) IFM:30A - 1.2 V
Thermal Resistance Rth (j-e) DC(Tota1) (Junction-Case) - 0.8 C/ W
Rth (i-a) Free Convection (Junction-Ambient) - 15 °C/ W
Note 2 : A value per rectifier unit.
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity p.nd.vuln.erabjlity t9 physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid Situations m which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1996-12-02 1/2
TOSHIBA 30L6P45
iF - UF PF(AV) - Io
" BRIDGE
1NSTANTANEOUS,FORWARD CURRENT
1F (A)
AVERAGE FORWARD POWER DISSIPATION
PF(AV)
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 10 15 20 25 30 35
AVERAGE OUTPUT RECTIFIED CURRENT
INSTANTANEOUS FORWARD VOLTAGE m: (V) IO (A)
g Te MAX. - IO Ta MAX. - IO
F l , n: " BRIDGE
ti r” BRIDGE 3 FREE CONVECTION
E < SOLDER LAND
E E 20mm2/LEAD
o . Ev:
V) g a;
E: fhe,
S o 5 10 15 20 25 30 35 o 1 2 a 4 5 6 7
AVERAGE OUTPUT RECTIFIED CURRENT AVERAGE OUTPUT RECTIFIED CURRENT
I0 (A) Io (A)
SURGE FORWARD CURRENT r . - t
ON-REPETITIVE th (i-c)
RATED LOAD
MODULE
ONE CELL
PEAK SURGE FORWARD CURRENT
IFSM (A)
TRANSIENT THERMAL IMPEDANCE
rt}, (j-c) (°C/W)
1 3 5 10 30 50 100 1 10 100 1000 10000
NUMBER OF CYCLES AT 50Hz AND 60Hz TIME t (ms)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1996-12-02 2/2

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