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30ETH06 |30ETH06IR N/a2000avai600V 30A HyperFast Discrete Diode in a TO-220AC package
30ETH06-1 |30ETH061IRN/a2056avai600V 30A HyperFast Discrete Diode in a TO-262 package
30ETH06S |30ETH06SIR N/a7200avai600V 30A HyperFast Discrete Diode in a D2-Pak (UltraFast) package


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30ETH06 -30ETH06-1-30ETH06S
600V 30A HyperFast Discrete Diode in a TO-220AC package
International
IEER Rectifier
Bulletin PD
-20748 rev.D 08/01
30ETH06
30ETH06S
30ETH06-1
Hyperfast Rectifier
Features
. Hyperfastfast Recovery Time
. Low Forward Voltage Drop
. Low Leakage Current
. 175°C Operating Junction Temperature
. Dual Diode CenterTap
Description! Applications
trr = 28ns typ.
|F(AV) = 30Amp
VR = 600V
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section ofSMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters Max Units
VRRM Peak Repetitive Reverse Voltage 600 V
IHAV) Average Rectifier Forward Current @ TC = 103°C 30 A
IFSM Non Repetitive Peak Surge Current @ T J = 25°C 200
T J, TSTG Operating Junction and Storage Temperatures - 65 to 175 ''C
Case Styles
30ETHO6 30ETH06S 30ETH06-1
iiiijit, 1ijjil
Base Base 2
Cathode Cathode
l 3 01 3 i 1 i 3
Cathode Anode NIC Anode N/C Anode
TO-220AC D2PAK TO-262

30ETH06, 30ETH06S, 30ETH06-1 International
Bulletin PD-20748 rev.D 08101 IOR Rectifier
Electrical Characteristics ti) Tg = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
VBR, v, Breakdown Voltage, 600 - - V IR = 100PA
Blocking Voltage
VF Forward Voltage - 2.0 2.6 V IF = 30A, To = 25''C
- 1.34 1.75 V IF = 30A, TJ = 150°C
IR Reverse Leakage Current - 0.3 50 pA VR = VR Rated
- 60 500 pA Tu = 150°C, VR = VR Rated
Cr Junction Capacitance - 33 - pF VR = 600V
Ls Serieslnductance - 8.0 - nH Measuredleadtolead 5mmfrom package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
trr Reverse Recovery Time - 28 35 ns IF = 1.0A, diF/dt = 50Alps, VR = 30V
- 31 - TJ = 25°C IF= 30A
77 - T: = 125°C VR = 200V
dir/dt = 200Alps
IRRM Peak Recovery Current - 3.5 - A TJ = 25''C
- 7.7 - T., = 125°C
Qrr Reverse Recovery Charge - 65 - nC T: = 25°C
- 345 - T: = 125''C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T J Max. Junction Temperature Range - 65 - 175 "C
Tst; Max. Storage Temperature Range - 65 - 175
Rthoc Thermal Resistance, Junction to Case Per Leg - 0.7 1.1 ''C/w
RmJA OD Thermal Resistance, Junction to Ambient Per Leg - - 70
Rmcs® Thermal Resistance, Case to Heatsink - 0.2 -
Wt Weight - 2.0 - g
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 |bf.in
co Typical Socket Mount
© Mounting Surface, Flat, Smooth and Greased
2
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