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30BQ060-30BQ060TR
60V 3A Schottky Discrete Diode in a SMC package
International
1:23 Redi
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics 3030060 Units
IRAV) Rectangular 3.0 A
waveform
VRRM 60 V
|FSM @tp=5ps sine 1200 A
VF @3.0Apk,TJ=125°C 0.52 V
TJ range - 55 to150 ''C
Bulletin PD-2.440 rev.l 12/03
Description! Features
The 3080060 surface-mount Schottky rectifier has been
designed for applications requiring Iowfotward drop and small
foot prints on PC boards. Typical applications are in diskdrives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
. Small foot print, surface mountable
. Very low forward voltage drop
. High frequency operation
. Guard ring for enhanced ruggedness and long term
reliability
Device Marking: IR3H
2.75 (.108)
3.15 (.124)
2.00 (.079)
2.62 (.103)
0.76 (.030)
1.52 (.060)
5.59 (.220)
6.22 (.245) CATHODE ANODE
6.60 (.260)
7.11 (.280) , (CO Ci) ,
.152 (.006)
—\ .305 (.012)
I Ci) POLARITY C PART NUMBER
_ f 7 .102 (.004)
" - .203 (.008)
7.75 (.305)
3.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
Bulletin PD-2.440 rev.l 12103
International
TOR Rectifier
Voltage Ratings
Part number
3OBQ060
VR Max. DC Reverse Voltage (V)
a,, Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
Parameters SOBQ Units Conditions
IHAV) Max.Average Forward Current 3.0 A 50% duty cycle@TL= 123°C, rectangular waveform
4.0 50% duty cycle @TL= 113 ''C, rectangular wave form
G, Max.PeakOneCycIe Non-Repetitive 1200 A 5ps Sineor3ps Rect.pulse Following any rated
load condition and
Surge Current © TC = 25°C 130 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non Repetitive Avalanche Energy 5.0 mJ TJ=25°C,IAS=1.0A,L=10mH
I AR Repetitive Avalanche Current 1.0 A Current decayinglinearlytozeroin1 psec
Frequencylimited by T, maxNa=1.5xVrtypical
Electrical Specifications
Parameters 3080 Units Conditions
VFM Max. Forward Voltage Drop (1) 0.58 V @ 3A T, = 25 "C
0.76 V @ 6A
0.52 V @3A Tr= 125°C
0.66 V @ 6A
IRS, Max. Reverse Leakage Current (1) 0.5 mA Tu = 25 ''C v,, = rated VR
20 mA T J = 125 "C
c, Max. Junction Capacitance 180 pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
LS Typical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse Wldth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 3OBQ Units Conditions
T J Max.Junction Temperature Range(*) -55 to150 ''C
Tsig Max.Storage Temperature Range -55 to150 ''C
Re,, Max. Thermal Resistance 12 "CAN DC operation
Junction to Lead (**)
RthJA Max. Thermal Resistance 46 °CNV DC operation
Junction to Ambient
wt Approximate Weight 0.24(0.008) g (02.)
Case Style SMC Similar to DO-214AB
Device Marking IR3H
( ) dP_tot < thermal runaway condition foradiode on its own heatsink
dT] Rth(j-a)
(") Mounted 1 inch square PCB
