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30BQ015N/a30avai15V 3A Schottky Discrete Diode in a SMC package
30BQ015IRF N/a100000avai15V 3A Schottky Discrete Diode in a SMC package
30BQ015TRIRN/a35000avai15V 3A Schottky Discrete Diode in a SMC package


30BQ015 ,15V 3A Schottky Discrete Diode in a SMC packageapplications are in disk drives, switchingwaveformpower supplies, converters, free-wheeling diodes, ..
30BQ015 ,15V 3A Schottky Discrete Diode in a SMC packageapplicationsUltra low forward voltage dropV @ 1.0Apk, T = 75°C 0.30 V F J High frequency operationG ..
30BQ015PBF , Schottky Rectifier, 3.0 A
30BQ015PBF , Schottky Rectifier, 3.0 A
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40CPQ040 ,40V 40A Schottky Common Cathode Diode in a TO-247AC packageapplications are inF(AV)switching power supplies, converters, free-wheeling diodes,waveformand reve ..
40CPQ045 ,45V 40A Schottky Common Cathode Diode in a TO-247AC packageFeaturesThe 40CPQ... center tap Schottky rectifier has been optimizedCharacteristics 40CPQ... Units ..
40CPQ045PBF , Schottky Rectifier, 2 x 20 A


30BQ015-30BQ015TR
15V 3A Schottky Discrete Diode in a SMC package
Bulletin PD-2.490 rev.H 03/03
International
122R Rectifier 30130015
SCHOTTKY RECTIFIER 3 Amp
Major Ratings and Characteristics Description] Features
The 30BQ015 surface mount Schottky rectifer has been
Characteristics 30BQ015 Units designed for applications requiring low forward drop and very
small foot prints on PC boards. The proprietary barrier
I Rectangular 3.0 A technology allows for reliable operation up to 125°C junction
F(AV) waveform temperature. Typical applications are in disk drives, switching
power supplies, converters, free-wheeling diodes, battery
VRRM 15 V charging, and reverse battery protection.
. 125°C T operation (V < 5V)
- . J R
IFSM @tp=5ps sme 650 A . Optimized for OR-ing applications
VF @1.0Apk,TJ=75°C 0.30 V . U1tra low forward voltage drop
. High frequency operation
T range - 55to125 ''C . Guard ring for enhanced ruggedness and long term
J reliability
. High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Device Marking: IR3C
2.75 (.108) 5.59 (.220)
3.15 (.124) 6.22 (.245) CATHODE ANODE
6.60 (.260)
W co C
A52 (.006)
fi .305 (.012) -
2.00 (.079) CO POLARITY Ci) PART NUMBER
2.62 (.103) " i ,
_3r, M-ol i gj .102 (.004)
.203 (.008)
0.76 (.030)
1.52 (.060) 7.75 (.305)
8.13 (.320)
Outline SMC
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to Application Note # AN-994
1
3OBQO15
Bulletin PD-2.490 rev.H 03103
International
TOR Rectifier
Voltage Ratings
Part number 30BQO15
VR Max. DC Reverse Voltage (V) 15
VRWM Max. Working Peak Reverse Voltage (V) 25
Absolute Maximum Ratings
Parameters 3080 Units Conditions
IHAV) Max.Average Forward Current 3.0 A 50% duty cycle@TL= 83°C, rectangular wave form
4.0 50% duty cycle@TL= 78°C, rectangular wave form
IFSM Max.PeakOneCycleNon-Repetitive 650 A 5ps Sineor3ps Rect.pulse Following any rated
load condition and
SurgeCurrent 75 10ms Sineor6ms Rect. pulse with rated VRRM applied
EAs Non RepetitiveAvalanche Energy 1.5 mJ TJ=25°C,IAS=O.5A, L=12mH
|AR Repetitive Avalanche Current 0.5 A Current decaying linearlytozero in 1 psec
Frequency limited by T, max. Va =1.5er typical
Electrical Specifications
Parameters 3080 Units Conditions
Vo, Max. Forward Voltage Drop (1) 0.35 V @ 3A T, = 25 °C
0.40 V @ GA
0.30 V @ 3A T, = 75 °C
0.35 V @ 6A
IRM Max. Reverse Leakage Current (1) 4 mA T J = 25 "C v,, = rated v,,
50 mA T J = 100 ''C
c, Max. Junction Capacitance 1120 pF VR = 51/oc (test signal range 100KHz to 1Mhz) 25°C
Ls Typical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/ps (Rated VR)
(1) Pulse VWdth < 300ps, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters 3OBQ Units Conditions
T, Max.JunctionTemperatureRange(*) -55to125 ''C
Tstg Max. Storage Temperature Range -55 to 150 "C
Re,, Max.Thermal Resistance 12 "CAN DCoperation
Junction to Lead (**)
RWA Max.Thermal Resistance 46 "CA/V DC operation
Junction to Ambient
wt Approximate Weight 0.24(0.008) g(oz.)
Case Style SMC SimilartoDO-214AB
Device Marking IR3C
C) dPtot < 1
dTj Rth(j-a)
C') Mounted 1 inch square PCB
thermal runaway condition fora diode on its own heatsink

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