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2SK971 from HITACHI

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2SK971

Manufacturer: HITACHI

Silicon N-Channel MOS FET

Partnumber Manufacturer Quantity Availability
2SK971 HITACHI 41 In Stock

Description and Introduction

Silicon N-Channel MOS FET The 2SK971 is a power MOSFET manufactured by Hitachi. Here are the key specifications:

- **Type**: N-channel MOSFET
- **Drain-Source Voltage (Vds)**: 500V
- **Drain Current (Id)**: 8A
- **Power Dissipation (Pd)**: 100W
- **Gate-Source Voltage (Vgs)**: ±20V
- **On-Resistance (Rds(on))**: 0.9Ω (typical)
- **Input Capacitance (Ciss)**: 1000pF (typical)
- **Output Capacitance (Coss)**: 200pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 50pF (typical)
- **Turn-On Delay Time (td(on))**: 20ns (typical)
- **Turn-Off Delay Time (td(off))**: 100ns (typical)
- **Package**: TO-220

These specifications are based on typical operating conditions and may vary slightly depending on the specific application and environment.

Partnumber Manufacturer Quantity Availability
2SK971 HIT 315 In Stock

Description and Introduction

Silicon N-Channel MOS FET The part 2SK971 is a power MOSFET manufactured by Hitachi (HIT). Here are the key specifications:

- **Type**: N-Channel MOSFET
- **Drain-Source Voltage (Vds)**: 900V
- **Drain Current (Id)**: 5A
- **Power Dissipation (Pd)**: 100W
- **Gate-Source Voltage (Vgs)**: ±20V
- **On-Resistance (Rds(on))**: 2.5Ω (typical)
- **Input Capacitance (Ciss)**: 1000pF (typical)
- **Output Capacitance (Coss)**: 200pF (typical)
- **Reverse Transfer Capacitance (Crss)**: 20pF (typical)
- **Turn-On Delay Time (td(on))**: 50ns (typical)
- **Turn-Off Delay Time (td(off))**: 150ns (typical)
- **Rise Time (tr)**: 50ns (typical)
- **Fall Time (tf)**: 100ns (typical)

These specifications are based on typical operating conditions and may vary slightly depending on the specific application and environment.

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