| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK619 |
HITACHI |
N/a |
13 |
 |
SILICON N-CHANNEL MOS FET |
2SK61-O TOSHIBA
2SK619 , SILICON N-CHANNEL MOS FET
2SK620 ,Silicon N-Channel MOS FETAbsolute Maximum Ratings (Ta = 25°C)Parameter Symbol Ratings Unit0.1 to 0.3Drain to Source breakdow ..
2SK65 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SK655 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK656 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
3KBP04M ,Diodes Document Number 888882 03-Dec-04Average Forward Current (A)Peak Forward Surge Current (A)3KBP005M ..
3LN01C ,N-Channel Small Signal MOSFET 30V 150mA 3.7 Ohm Single CPAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3LN01C-TB-H , General-Purpose Switching Device Applications
