2SK3757 ,Power MOSFET (N-ch 250V<VDSS≤500V)Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage V 450 V ..
2SK3761 ,MOSFET 2SK/2SJ SeriesApplications 4.7 max4.7 max 10.5 max 10.5 max 3.84 0.2 1.3 3.84 0.2 1.3 • Low drain-source ON r ..
2SK3767 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2Thermal resistance, channel to case R 5.0 ° ..
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2SK3782 ,N-channel Silicon J-FETDATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3782N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTO ..
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3DD13002 , TO-251 Plastic-Encapsulate Transistors
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3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
3DD13005 ,MICROELECTRONICS CO., LTD. - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
2SK3757
Power MOSFET (N-ch 250V<VDSS≤500V)
2SK3757 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3757 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 42.8 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with caution.
Unit: mm
Weight: 1.7 g (typ.)
