Home ›  2 > 230 > 2SK3674-01S,mfg:FUJ, Power MOSFET SuperFAP-G series Target Specification

2SK3674-01S Fast Delivery

Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
2SK3674-01S	FUJ	N/a	1000		Power MOSFET SuperFAP-G series Target Specification

2SK3677 FUJI
2SK3677-01MR FUJI, N-CHANNEL SILICON POWER MOSFET
2SK3677-MR FUJI
2SK3674-01S , Power MOSFET SuperFAP-G series Target Specification
2SK3679 ,Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY2SK3679-01MR (900V/1.58Ω /9A)1) Package TO-220F2) Absolute Maximum Ratings (Tc=25 unle ..
2SK3681-01 , N-CHANNEL SILICON POWER MOSFET
2SK3681-01 , N-CHANNEL SILICON POWER MOSFET
2SK3681-01 , N-CHANNEL SILICON POWER MOSFET
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..