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2SK3673-01MR from FUJI

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2SK3673-01MR

Manufacturer: FUJI

N-CHANNEL SILICON POWER MOSFET

Partnumber Manufacturer Quantity Availability
2SK3673-01MR,2SK367301MR FUJI 46 In Stock

Description and Introduction

N-CHANNEL SILICON POWER MOSFET The **2SK3673-01MR** is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. Known for its low on-resistance and high-speed switching capabilities, this component is well-suited for power supply circuits, motor control, and DC-DC converters, where energy efficiency and thermal performance are critical.  

With a robust voltage and current rating, the 2SK3673-01MR ensures reliable operation in demanding environments. Its compact surface-mount package (TO-252) makes it an ideal choice for space-constrained designs while maintaining excellent heat dissipation properties. Engineers often favor this MOSFET for its ability to minimize conduction losses, contributing to improved system efficiency.  

Key features include a low threshold voltage, fast switching response, and strong avalanche energy resistance, making it a dependable choice for both industrial and consumer electronics. Whether used in switching regulators or load drivers, the 2SK3673-01MR delivers consistent performance with minimal power dissipation.  

For designers seeking a balance between cost-effectiveness and high-power handling, this MOSFET presents a practical solution. Its specifications and reliability make it a versatile component in modern power electronics.

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