| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK3646-01L |
FUJI |
N/a |
430 |
 |
N-CHANNEL SILICON POWER MOSFET |
2SK3649-01MR FJUI, N-CHANNEL SILICON POWER MOSFET
2SK364-BL-V TOSHIBA
2SK364-GR Toshiba
2SK364-V Toshiba
2SK3651 FUJ
2SK3646-01L , N-CHANNEL SILICON POWER MOSFET
2SK3652 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitDrain-source ..
2SK3653B ,N-CHANNEL SILICON J-FETDATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3653BN-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSIST ..
2SK3658 ,Power MOSFET (N-ch single 30V<VDSS≤60V)Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage V 60 V ..
2SK3659 ,SWITCHING N-CHANNEL POWER MOSFETELECTRICAL CHARACTERISTICS (TA = 25°C)Characteristics Symbol Test Conditions MIN. TYP. MAX. UnitZer ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
