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2SK3560PANASONICN/a193avaiSilicon N-channel power MOSFET For PDP/For high-speed switching


2SK3560 ,Silicon N-channel power MOSFET For PDP/For high-speed switchingElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3561 ,MOSFET 2SK/2SJ SeriesTENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3561 uni ..
2SK3561. ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
2SK3562 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit2 Thermal resistance, channel to case R 3.12 ..
2SK3563 ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.57 ..
2SK3563.. ,MOSFET 2SK/2SJ SeriesApplications 10±0.3 2.7±0.2 φ3.2±0.2• Low drain-source ON resistance: R = 1.35Ω (typ.) DS (ON)• Hi ..
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3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
3B20-01 ,Non-Isolated AC Strain or Torque Input Signal Conditioning ModuleGENERAL DESCRIPTION selecting resistors, a Windows program, 3B-CUSTOM, The 3B20 is a wideband sin ..
3B41 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Moduleapplications requiring simultaneous precision voltage and current outputs. Each high-resolution mea ..
3B41-03 ,Isolated Wide Bandwidth Volt Input Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be linearize and convert the transducer o ..


2SK3560

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