| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK3555-01MR |
FUJI |
N/a |
200 |
 |
N-CHANNEL SILICON POWER MOSFET |
2SK3556-01S-TE24R FUJI
2SK3556-01S-TE24R ELECTRIC
2SK3555-01MR , N-CHANNEL SILICON POWER MOSFET
2SK3557 ,N-Channel JFET, 15V, 10 to 32mA, 35mS, CPAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK3560 ,Silicon N-channel power MOSFET For PDP/For high-speed switchingElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitGate-drain s ..
2SK3561 ,MOSFET 2SK/2SJ SeriesTENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3561 uni ..
2SK3561. ,MOSFET 2SK/2SJ SeriesThermal Characteristics Characteristics Symbol Max Unit 2Thermal resistance, channel to case R 3.12 ..
3B16-01 ,Non-Isolated Strain Gage Input; 3 Hz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be Torque Transducers, Frequency Transduc ..
3B18-00 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning ModuleGENERAL DESCRIPTION both voltage and current outputs. The 3B18 is a wideband (20kHz) single-channe ..
3B18-01 ,Non-Isolated Strain Gage Input; 20 kHz Bandwidth Signal Conditioning Modulefeatures two simultaneous outputs, the voltage output can be without the inherent noise, non-linear ..
