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2SK2862
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) DC .DC Converter, Relay Drive and Motor Drive Applications
2SK2862 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2862 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 2.9 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 500 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, starting Tch = 25°C, L = 48.4 mH, RG = 25 Ω, IAR = 2 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
