2SK2844 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications 4 V gate drive Low drain−source ON resistance : R = 16 mΩ (typ.) DS (ON)High ..
2SK2844 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.08 ..
2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 8.0 Ω (typ.) DS (ON)High forward transfer ..
2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2845 Chopper R ..
2SK2845 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK2846 ,Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 4.2 Ω (typ.) DS (ON)High forward transfer ..
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37LV36 , 36K, 64K, and 128K Serial EPROM Family
3-822516-7 , PLUG SURFACE MOUNT LEAD FREE VERSION
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2SK2844
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK2844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2 −π−MOSV)
2SK2844 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 16 mΩ (typ.) High forward transfer admittance : |Yfs| = 26 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 83.3
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 152 µH, RG = 25 Ω, IAR = 35 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 2.0 g (typ.)
