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2SK2603 |2SK2603TOS N/a3500avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications


2SK2603 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.25 ..
2SK2604 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.9 Ω (typ.) DS (ON)High forward ..
2SK2605 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2606 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter, Relay Drive and Motor Drive ApplicationsApplications  Low drain−source ON resistance : R = 1.0 Ω (typ.) DS (ON) High forward transf ..
2SK2607 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (PI-MOSIII) CHOPPER Regulator, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 0.883 ..
2SK2608 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 3.73 Ω (typ.) DS (ON)High forward ..
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2SK2603
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Chopper Regulator, DC .DC Converter, and Motor Drive Applications
2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2603

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.6 S (typ.) Low leakage current : IDSS = 100 µA (max) (VDS = 640 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 83.3
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, IAR = 6 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 2.0 g (typ.)
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