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2SK211TOSHIBAN/a6000avaiField Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications


2SK211 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications  Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)  High forward transfer admit ..
2SK2110 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK211-0 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK2111 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2111N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK2112 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGDATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2112N-CHANNEL MOS FETFOR HIGH-SPEED SWITCHINGThe 2S ..
2SK212 ,N-Channel Junction Silicon FET FM Tuner ApplicationsFeatures Package Dimensions · Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040 ..
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS
3580 ,Brown Corporation - HIGH VOLTAGE OPERATIONAL AMPLIFIERS


2SK211
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
2SK211 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211

FM Tuner Applications
VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admitance: |Yfs| = 9 mS (typ.) Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Maximum Ratings (Ta �
�� � 25°C)
Marking

Electrical Characteristics (Ta �
�� � 25°C) NF VDD � 10 V, f � 100 MHz (Figure)
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
Unit: mm
Weight: 0.012 g (typ.)
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