2SK2009 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2010 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK2010. ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2063A · Low-vol ..
2SK2011 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsOrdering number:EN4320AN-Channel Silicon MOSFET2SK2011Ultrahigh-Speed Switching Applications
2SK2011- ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2063A · Low-vol ..
2SK2012 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
2SK2009
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009 High Speed Switching Applications
Analog Switch Applications High input impedance. Low gate threshold voltage: Vth = 0.5~1.5 V Excellent switching times: ton = 0.06 µs (typ.) toff = 0.12 µs (typ.) Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) Small package. Enhancement-mode
Marking Equivalent Circuit
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.012 g (typ.)
