2SK192A ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications High power gain: G = 24dB (typ.) (f = 100 MHz) PS Low noise figure: NF = 1.8dB ..
2SK1930 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Chopper Regulator, DC .DC Converter, and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 3.0 Ω (typ.) DS (ON)High forward transfer ..
2SK1931 , VR Series Power MOSFET(200V 5A)
2SK1931 , VR Series Power MOSFET(200V 5A)
2SK1936-01 ,N-CHANNEL SILICON POWER MOS-FETApplications
q Switching regulators
o JPS
o DC-DC converters
o Seneral purpose power am ..
2SK1937-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
3500C , FEMALE THREADED STANDOFFS
35021-1201 , Board-In Right Angle Crimp Terminal
3507J ,Brown Corporation - Fast-Slewing OPERATIONAL AMPLIFIER
35284-1615 , 2.28mm (.090") Tab Wire-to-Wire Uniconn Housing, Female, 16 Circuits
35420-9902 , Tab Crimp Terminal 35420, AVSS 2f
35716-0110 , 2.36mm (.093") Diameter Pin Wire-to-Board Terminal, Female, Brass, Wire Range 20-24 AWG (0.52-0.20mm²), Pre-Tin Plated
2SK192A
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
2SK192A TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A FM Tuner Applications
VHF Band Amplifier Applications High power gain: GPS = 24dB (typ.) (f = 100 MHz) Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) NF VDD � 10 V, f � 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
Unit: mm
Weight: 0.13 g (typ.)
