2SK1530 ,Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 High Power Amplifier ..
2SK1531 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MCICHARACTERISTIC SYMBOL RATINGDrain-Source Voltage hssOraiiAlaie Vo ..
2SK1531 ,Discrete SemiconductorsThermal CharacteristicsC0RACTERl8Tl0 I SYMBOLI MAX. I UNITThermal Resistance, Channel to Case MM) I ..
2SK1533 , HVX Series Power MOSFET
2SK1533 , HVX Series Power MOSFET
2SK1539 , HVX Series Power MOSFET
3412.0124.24 , Non resettable fuses
34151 , TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE, 22-16 AWG
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
2SK1530
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application
2SK1530 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1530 High Power Amplifier Application High breakdown voltage : VDSS = 200V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SJ201
Maximum Ratings (Ta = 25°C)
Marking
Electrical Characteristics (Ta = 25°C) Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification 0: 0.8~1.6 Y: 1.4~2.8
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 9.75 g (typ.)
