| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SK1070PIDTL-E |
RENESAS |
N/a |
15000 |
 |
Silicon N-Channel Junction FET |
2SK1070PIETL-E RENESAS, Silicon N-Channel Junction FET
2SK1070PIETR RENESAS
2SK107-2 SONY
2SK1074 MITSUBISHI
2SK1078 TOS
2SK1078 TOSHIBA
2SK1078 TE12L(Z3) TOSHIBA
2SK1078 TE12R(Z3) TOSHIBA
2SK1079 TOSHIBA
2SK1079/Z4 TOSHIBA
2SK108 MIT
2SK1081 FEC
2SK1081 富士
2SK1081 FUJI
2SK1070PIDTL-E , Silicon N-Channel Junction FET
2SK1081-01 ,N-CHANNEL SILICON POWER MOS-FETFeatures
oHigh speed switching
0 L Juv on-resistance
ONO secondary breakdown
oLow driving ..
2SK1082 ,N-Channel Silicon Power MOS-FETvmmvemm
2SKI 082-01 SIPMOS® FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
FAP-II SERI ..
2SK1083 ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1087 ,N-CHANNEL SILICON POWER MOSFETgSK1087-MR
FUJI POWER MOS-FET
N-C 4ANNEL SILICON POWER MOS-FET
I F eatures
. High curre ..
33661 ,LIN Enhanced Physical Interfacefeatures of CAN are not required. The 33661 is a Physical Layer component dedicated to automotive L ..
33990 , Enhanced Class B Serial Transceiver
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
