| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SJ553 |
HITACHI |
N/a |
1000 |
 |
Silicon P Channel MOS FET High Speed Power Switching |
| 2SJ553 |
RENESAS |
N/a |
858 |
|
Silicon P Channel MOS FET High Speed Power Switching |
2SJ553-90STL RENESAS
2SJ554 HIT, Silicon P Channel MOS FET High Speed Power Switching
2SJ555-90 RENESAS
2SJ553 , Silicon P Channel MOS FET High Speed Power Switching
2SJ557 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SJ557-T1B ,Pch enhancement type MOS FETFEATURES12• Can be driven by a 4 V power source• Low on-state resistance0.650.95 0.95RDS(on)1 = 155 ..
2SJ559 ,P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
2SJ559-T1 ,Pch enhancement type MOS FETFEATURES+0.10.2–0• Can be driven by a 2.5 V power source.0.6• Low gate cut-off voltage.0.5 0.50.75 ..
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
