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2SJ508TOSHIBAN/a1000avaiTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ508N/a18000avaiTOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


2SJ508 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
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2SJ508
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ508 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ508

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 0.7 S (typ.) Low leakage current : IDSS = −100 µA (VDS = −100 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 250
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A
Note 4: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
(The two digits represent
the part number.)
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