2SJ407 ,Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ407 ,Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ413 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SJ413 ,P-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2076B · Low-vol ..
2SJ416 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage VDSS - 30 VGate-to-Source Voltage ..
2SJ417 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON-resistance.unit:mm · Ultrahigh-speed switching.2083B · 4V driv ..
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ407
Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ407 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSV)
2SJ407 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −200 V) Enhancement−mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 62.5
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 12.6 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 1.9 g (typ.)
