| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SJ317NYTL-E |
Renesas |
N/a |
367 |
 |
Silicon P Channel MOS FET |
2SJ317NYTR RENESAS
2SJ317NYTR HIT
2SJ317NYTR HITACHI
2SJ317NYTR/NY HITACHI日立
2SJ318
2SJ318 HIT
2SJ318-01 HITACHI
2SJ318S-E1
2SJ318STR HITACHI
2SJ318STR RENESAS
2SJ319-01STL NEC
2SJ319STL RENESAS
2SJ319STL-E RENESAS, Silicon P Channel MOS FET
2SJ32 ON
2SJ321 HIT
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l
TEST CONDITIONS .
VGS = ~10 V, ID = -2.0 A
Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
