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2SD553TOSHIBAN/a100avaiSilicon NPN Power Transistors TO-220C package


2SD553 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS Unit in mm10.3MAX. 953.6 i 0.2_--------'--------Low Saturation Voltage : VCE (sat)=0-4 ..
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2SD553
Silicon NPN Power Transistors TO-220C package
TOSHIBA
2SD553
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS
POWER AMPLIFIER APPLICATIONS
0 Low Saturation Voltage : VCE (sat)=0-4V (Max.) (at IC=4A)
0 Complementary to 2SB553.
INDUSTRIAL APPLICATIONS
Unit in mm
10.3MAX. 953.6 i 0.2
5343:131
6.7MAX.
15.3NIAX.
13.0MIN.
"i. ESSLEECTOR (HEAT SINK)
MAXIMUM RATINGS (Ta=25°C) 3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT JEDEC TO-220AB
Collector-Base Voltage VCBO 70 V EIAJ SC-46
Collector-Emi; Voltage VCEO 50 V TOSHIBA 2-10AIA
Emitter-Base Voltage VEBO V Weight .. 1.9g
Collector Current 1C A Mounting Kit No. AC75
Base Current IB A
Collector Power Ta=25°C 1.5
Dissipation Tc = 25°C PC 40 W
J unction Temperature Tj 150 ''C
Storage Temperature Range Tstg -55--150 T
TOSHIBA 2SD553
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 70V, IE = 0 - - 30 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = O - - 50 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 50mA, IB - O 50 - - V
hFE (1)
= 1 I = IA - 24
DC Current Gain (Note) VCE V, C 70 O
hFE (2) VCE = IV, 10 = 4A 30 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 4A, IB - 0.4A - 0.2 0.4 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 4A, IB - 0.4A - 0.9 1.2 V
Transition Frequency fT VCE = 4V, 10 = IA - 10 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1MHz - 250 - pF
. IN- OUT-
Turn-on Time ton 2316's PUT 1B1 PUT - 0.2 -
Switching s Ti IBI 'l,n a g 2 5
Time torage 1me tstg 1B2 , - . - ps
VCC = 30V
. I131: -IB2=0.3A,
F 11 T - 0.5 -
a me tf DUTY CYCLES 1%
Note : hFE(1) Classification o : 70-140, Y : 120--240
2 2001-05-24
TOSHIBA
COLLECTOR-EMI'I'I‘ER VOLTAGE VCE (V)
COLLECTOR-EMIT’I‘ER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE V0135”) (V)
VCE - IC
COMMON EMITTER
Tc = 25°C
1 2 3 4 5 6 7
COLLECTOR CURRENT 1C (A)
VCE - IC
COMMON EMITTER
Tc = - 55°C
1 2 3 4 5 6 7
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT Ic (A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hm
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
2SD553
VCE - IC
COMMON EMITTER
1.0 Tc = 100°C
0.8 20 30 50 70 100 150
0.6 300
0.4 500
0 1 2 3 4 5 6 7
COLLECTOR CURRENT IC (A)
hFE - 1C
COMMON EMITTER
500 VCE =1V
Te = 100''C
30 -55
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 1c (A)
VBE (sat) - IC
COMMON EMITTER
IC / IB = 10
b.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
TOSHIBA 2SD553
IC - VBE SAFE OPERATING AREA
COMMON EMITTER l l l I I l l
VCE =1v IC MAX. (PULSED) yd.
IO l I I , \ .
I I I 's l Vm".
2 2 IC MAX. \ N l 10ms)k.
v v 5 (CONTINUOUS) N l s.. 100ms)k.
E E DC OPERATION \\\ k
g Tc=100°C 25 55 E Tc=25°C \
o o 't \
g g 1 A h
a a l \ ,
a a N h
5 j 0.5 \\
8 8 .)k. SINGLE NONREPETITIVE '? l
0.3 PULSE Tc=25°C (
CURVES MUST BE DERATED (s
LINEARLY WITH INCREASE l
IN TEMPERATURE. VCEO M AX.
0 0.4 0.8 1.2 1.6 2.0 1 3 10 30 100
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
PC - Ta
_ LO Tc=Ta INFINITE HEAT SINK
40 O) (2) 300X3OOX2mm At HEAT SINK
N C2 200x200x2mm At HEAT SINK
N Q) 150x150x2mm At HEAT SINK
g 36 , © 100x100x2mm At HEAT SINK
' \ (l? 70X70X2mm At HEAT SINK
J? 32 C) 50X50X2mm Ae
HEAT SINK
g N (li) 35X35X1mm Ae
t: HEAT SINK
be C)) 25X25X1mm At
a 24 - (2) " HEAT SINK
E I ", k (10 NO HEAT SINK
5 20 - CO N
t _ T F, \
tN 16 l "s N. N
ttt 1 , 's,
8 _ C9 scl,, _
8 12 - 1 's, NNN k
iii, <6? - "ss, "SN,
Q 8 - co "s "s, _ Nu
- \ \ N A
4 .62) ts-dr?.':, srssts
_ll) "--d?i'::rsu2"it::rss2ts. \
o I "_....
O 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (''C)
4 2001-05-24
TOSHIBA 2SD553
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-05-24
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