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2SD2387
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications
2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2387 Power Amplifier Applications High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1558
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 4.7 g (typ.)
BASE
EMITTER≈ 100 Ω
COLLECTOR
