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2SD2253 TOS|TOSHIBA N/a 10 SILICON NPN TRIPLE DIFFUSED POWER
2SD2253 TOSH|TOSHIBA N/a 93 SILICON NPN TRIPLE DIFFUSED POWER



2SD2253 , SILICON NPN TRIPLE DIFFUSED POWER
2SD2254 ,Silicon PNP epitaxial planar type Darlington(For power amplification)Absolute Maximum Ratings (T =25˚C) –nC1.0– 0.2Parameter Symbol Ratings Unit 0.6– 0.2Collector to b ..
2SD2257 ,TO-220 Plastic-Encapsulate Biploar TransistorsAPPLICATIONS1010.3¢3.2:0.22.7i0.20 High DC Current Gain : hFE=2000 (MIN.)0 Low Saturation Voltage : ..
2SD2257 ,TO-220 Plastic-Encapsulate Biploar Transistors2SD2257TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPEHIGH POWER SWITCHING
2SD2258 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
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