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2SD1614-T1 from NEC, NEC 56900pcs , SOT-89 , Alternate PN:2SD1614T1,Silicon transistor
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2SD1614-T1 NEC N/a 56900

ELECTRICAL CHARACTERISTICS (Ta = 25 0C) CHARACTERISTIC . SYMBOL IMIN. Collector Cutoff Current ICBO 100. nA TEST CONDITIONS _ VCB=30V, IE---0 Emitter Cutoff Current . IEBO" 100 nA VEB=6.0 V, Ic=0. DC Current Gain hFE1*** 135 350 600 VCE = 2.0 V, IC = 100 mA DC Current Gain hF52*** 40 VCE=2.0 V, IC=2.OA Collector Saturation Voltage VCE(sat)*** 0.3 0.5 V IC = 2.0 A, Is = 50 mA Base Saturation Voltage A VBE(sat)*** I 0.95 1.2" V IC = 2.0 A, Is = 50 mA Base to Emitter Voltage " vis *** 650 7 680 750 mV VCE = 6.0 V, IC = 100 mA Gain Bandwidth Product f'r E 200 MHz VCE = 10 V, IE = -50 mA Output Capacitance "''Pulsed: PW s 350 us, Duty Cycle g 2 % hFE Classification Document No. TC-1649A (O.D.No. Ttr-NM 1A) Date Published November 1994 M Printed in Japan VCB--1oV,lE--0,f=1.0MHz (io. NEC Corporation 1985NEC ' '. ' ' T ZSD1614
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