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2SD1609C from HIT, 2706pcs , TO126
Partno Mfg Dc Qty Available
2SD1609C HIT N/a 2706
2SD1609C from HITACHI, 60000pcs


2SD1614 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 0C) CHARACTERISTIC . SYMBOL IMIN. Collector Cutoff Current IC ..
2SD1614-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C) CHARACTERISTIC . SYMBOL IMIN. Collector Cutoff Current IC ..
2SD1614-T2 ,Silicon transistorFEATURES ''AcKt.elu?eey"oNs . World Standard Miniature Package m ml imeters 0 High DC Current G ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDFEATURESPACKAGE DIMENSIONS• World Standard Miniature Packagein millimeters• Low VCE (sat) VCE(sat ..
2SD1615 ,NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLDDATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDES ..
30A ,SCHOTTKY RECTIFIERFeaturesThe 22GQ100 Schottky rectifier has been expresslydesigned to meet the rigorous requirements ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Absolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30A02CH ,Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage V --30 ..
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