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2SD1415A from TOSHIBA, TOSHIBA 950pcs,Silicon NPN Power Transistors TO-220F package
Partno Mfg Dc Qty Available
2SD1415A TOSHIBA N/a 950
2SD1415A from TOS, TOSHIBA 3pcs , TO220F,Silicon NPN Power Transistors TO-220F package
2SD1415A from TOSH, TOSHIBA 818pcs , TO220/,Silicon NPN Power Transistors TO-220F package

APPLICATIONS Unit in mmHAMMER DRIVE, PULSE MOTOR DRIVE 2SD1415ATOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON)HIGH POWER SWITCHING APPLICATIONS qftAftQ “7+0, TTa.nn0 High DC Current Gain: hFE = 2000 (Min.) (VCE = 3V, 1C = 3A)5.6 MAX.0 Low Saturation Voltage : VCE (sat)" 1.5V (Max.) (10 = 3 A)MAXIMUM RATINGS (Tc = 25°C)OJSiOJSICHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBOCollector-Emitter Voltage VCEOEmitter-Base Voltage VEBO “-2.54:i:0.25ml1 2 3 oiCollector Current 'r1iss=er1ii_1.,'t7,) é: EéifmPCDissipation Tc-- - 25°C 252541025OJSiOJS45i02J EDEC -J EITA -TOSHIBA 2- 10R1AWeight : 1.7g (Typ.)EQUIVALENT CIRCUITBASE! I I 5 I) l2SD1415A

2SD1415A ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS qftAftQ “7+0, TTa.nn0 High DC Current Gain: hFE = 2000 (Min.) (VCE = 3V, 1C = 3A)5.6 M ..
2SD1417 ,Silicon NPN Power Transistors TO-220Fa package
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2SD1419DETL-E , Silicon NPN Epitaxial
2SD1419DETL-E , Silicon NPN Epitaxial
305UR160 ,Standard recovery diodeapplicationsMajor Ratings and Characteristics301U(R)Parameters Units80 to 200 250I 330 300 AF(AV)@ ..
30700-1080 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 8 Circuits, Polarization Option 1Gray
30700-1120 , 2.54mm (.100") Pitch, 0.64mm (.025") Width H-DAC 64™ High Density AutomotiveConnectors, Dual Row, Female Harness Assembly, 12 Circuits, Polarization OptioGrayn
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