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2SD1276 from Panasonic, Panasonic 200pcs , TO220F,Power Device
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2SD1276 Panasonic N/a 200

Electrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1276 V I = 30 mA, I = 0 60VCollector-emitter voltageCEO C B(Base open)2SD1276A 80Base-emitter voltage V V = 3 V, I = 3 A 2.5 VBE CE C2SD1276 I V = 60 V, I = 0 200 µACollector-base cutoffCBO CB Ecurrent (Emitter open)2SD1276A V = 80 V, I = 0 200CB E2SD1276 I V = 30 V, I = 0 500 µACollector-emitter cutoffCEO CE Bcurrent (Base open)2SD1276A V = 40 V, I = 0 500CE BEmitter-base cutoff current (Collector open) I V = 5 V, I = 02 mAEBO EB CForward current transfer ratio h V = 3 V, I = 0.5 A 1 000 FE1 CE C*h V = 3 V, I = 3 A 1 000 10 000FE2 CE CCollector-emitter saturation voltage V I = 3 A, I = 12 mA 2.0 VCE(sat)1 C BV I = 5 A, I = 20 mA 4.0CE(sat)2 C BTransition frequency f V = 10 V, I = 0.5 A, f = 1 MHz 20 MHzT CE CTurn-on time t I = 3 A, I = 12 mA, I = −12 mA, 0.5 µson C B1 B2Storage time t V = 50 V 4.0 µsstg CCFall time t 1.0 µsfNote) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.2. : Rank classification*Rank R Q Ph 1 000 to 2 500 2 000 to 5 000 4 000 to 10 000FE2Publication date: February 2003 SJD00190BED 114.0±0.5 16.7±0.3Solder Dip(4.0)7.5±0.2 0.7±0.14.2±0.22SD1276, 2SD1276AP  T I  V I  VC a C CE C BE5010 10(1)T =TaC V =3VTC=25˚C CE(2)With a 100×100×2mmAl heat sink(1)I =4.0mAB(3)With a 50×50×2mm408 83.5mAAl heat sink3.0mA(4)Without heat sink2.5mA(PC=2W)2.0mA 25˚C30 1.5mA6 6T =100˚CC –25˚C1.0mA0.5mA204 4(2)102 2(3)(4)0000 40 80 120 16001 24 6 80 0 0.8 1.6 2.4 3.2Ambient temperature T (°C)a Collector-emitter voltage V (V) Base-emitter voltage V (V)CE BEV  I h  I C  VCE(sat) C FE C ob CB5 4100 10 10I /I =250 V =3VC B CEI =0Ef=1MHzT =25˚CCT =100˚CC4310 101025˚C–25˚C25˚CTC=100˚C 3 21 10 10–25˚C20.1 10 100.0110 10.01 0.1 1 10 0.01 0.1 1 10 0.1 1 10 100Collector current I (A) Collector current I (A) Collector-base voltage V (V)C C CBSafe operation area R  tth3100 10Non repetitive pulse (1)Without heat sink(2)With a 100×100×2mm Al heat sinkTC=25˚C210(1)I10 CP(2)ICt=1ms10t=10ms1DC10.1−110−2100.01−4 −3 −2 −1 2 3 410 10 10 10 1 10 10 10 101 10 100 1 000Time t (s)Collector-emitter voltage V (V)CE2 SJD00190BEDCollector current I (A) Collector-emitter saturation voltage V (V) Collector power dissipation P (W)C CE(sat) C2SD12762SD1276AThermal resistance R (°C/W)Forward current transfer ratio h Collector current I (A)thFE CCollector output capacitanceC (pF)Collector current I (A)obC (Common base, input open circuited) and material(1) if any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" .(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our .(3) the use of theproduct or technologies as described in this material.(4)
2SD1276#T

2SD1276 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1276 V I ..
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2SD1276A ,Power Deviceapplications or generalelectronic equipment (such as office equipment, communications equipment, me ..
2SD1276A ,Power DeviceAbsolute Maximum Ratings T = 25°C1.3±0.2a1.4±0.1Parameter Symbol Rating Unit+0.20.5–0.10.8±0.12SD1 ..
2SD1277 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD1277 V I ..
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