| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SD1210 |
NEC|NEC |
N/a |
495 |
 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR |
2SD1211-R MITSUBISHI
2SD1210 , NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR
2SD1212 ,NPN Epitaxial Planar Silicon Transistors 30V/12A High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1216 ,SI NPN PLANAR DARLINGTONElectrical Characteristics (Ta=25"C)Condition3 V f , Utlir6tih', Icao 1%-=25V, 15:0 .3-3 "I f L tit ..
2SD1220 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier ApplicationsApplications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C)Characteristics Sym ..
2SD1221 ,Transistor Silicon NPN Diffused Type (PCT process) Audio Frequency Power Amplifier Application2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT process) 2SD1221 Audio Frequency Powe ..
30405 , Flexible ferrite absorber platte
30410 , Flexible ferrite absorber platte
30485 ,FCI by Honeywell - Fire Fighter Phone Accessories
