Partno |
Mfg |
Dc |
Qty |
Available | Descript |
2SD1163A |
HIT |
N/a |
100 |
|
NPN Silicon Epitaxial Power Transistor |
2SD1163A |
HITACHI |
N/a |
10000 |
|
NPN Silicon Epitaxial Power Transistor |
2SD1163A , NPN Silicon Epitaxial Power Transistor
2SD1164 ,Silicon transistorFEATURES
it
E
R, = 10 k!) C'-
R2 = 500 kf2
a?
R1 R2 CD
QUALITY GRADE
Standard
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2SD1164-Z ,NPN SILICON EPITAXIAL TRANSISTOR MP-3applications.
ABSOLUTE MAXIMUM RATINGS (Ta: 25 °C)
Collector to Base Voltage Vcao ' 150 V
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2SD1175 ,Si NPN triple diffused junction mesa. Line-operated horizontal deflection output.Features. Tv N74 at-- wmaz, /Built- in damper diode on Chip. mm. v.'i, '.tktroojisit, [rolhfaott%eh ..
2SD1175 ,Si NPN triple diffused junction mesa. Line-operated horizontal deflection output.1-. -""L. i‘n-‘Z- .:. JC-.---.-,PANASONIC 1:NoL/s:Lsyd:sov. 11f i'Cllis"" EEIBEBELI UDU‘IEEE "rj'"' ..
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