| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SD103 |
TOS|TOSHIBA |
N/a |
96 |
 |
isc Silicon NPN Power Transistors |
2SD103 , isc Silicon NPN Power Transistors
2SD1030 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SD1033 ,NPN SILICON EPITAXIAL TRANSISTOR MP-3TYPICAL CHARACTERISTICS (Ta = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Pr — ..
2SD1046 ,NPN Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SD1047 ,POWER TRANSISTORS(12A,140V,100W)Features Package Dimensions · Capable of being mounted easily because of one-unit:mmpoint fixing ty ..
302R29N101JV4E , HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
30405 , Flexible ferrite absorber platte
30410 , Flexible ferrite absorber platte
