| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC945-GR |
SAMSUNG |
N/a |
2680 |
 |
NPN Silicon Plastic-Encapsulate Transistor |
| 2SC945-GR |
|
N/a |
30000 |
|
NPN Silicon Plastic-Encapsulate Transistor |
2SC945-GR , NPN Silicon Plastic-Encapsulate Transistor
2SC945K , NPN Silicon Transistor(AF amplifier and low speed switching)
2SC945-K , NPN Silicon Transistor(AF amplifier and low speed switching)
2SC945P , NPN Silicon Transistor(AF amplifier and low speed switching)
2SC945P , NPN Silicon Transistor(AF amplifier and low speed switching)
301U160 ,1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)packageapplicationsMajor Ratings and Characteristics301U(R)Parameters Units160 to 200 250I 330 300 AF(AV)@ ..
301UR160 ,Standard recovery diodeFeatures300AWide current rangeHigh voltage ratings up to 2500VHigh surge current capabilitiesStud c ..
302R29N101JV4E , HIGH VOLTAGE SURFACE MOUNT MLCCS 250 - 5,000 VDC
