| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC752 |
TOSHIBA|TOSHIBA |
N/a |
87 |
 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
2SC752(G)TM-Y TOSHIBA
2SC752-O TOSHIBA
2SC752-Y Toshiba
2SC752-Y ST
2SC761-Y PANASONIC
2SC761Z PANASONIC
2SC763 MIT
2SC784 TOSHIBA
2SC784 TOS
2SC789 UTG, Silicon NPN Power Transistors
2SC789#T
2SC790 UTG, isc Silicon NPN Power Transistor
2SC8004Q
2SC8050 HIT
2SC8050 TOSHIBA
2SC8050C 331
2SC8050-C 蓝箭
2SC8050-C KEC
2SC8050D ON
2SC8050-D KEC
2SC805A SONY
2SC811A-T2B NEC
2SC812 FUJ
2SC815-O FAIRCHILD
2SC8205F
2SC827 FUJ
2SC752 , TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
2SC828 , Si NPN Epitaxial Planar
2SC828 , Si NPN Epitaxial Planar
2SC828 , Si NPN Epitaxial Planar
2SC829 ,Small-signal deviceAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating UnitCollector-base voltage (Emitter open ..
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301U160 ,1600V 330A Std. Recovery Diode in a DO-205AB (DO-9)packageapplicationsMajor Ratings and Characteristics301U(R)Parameters Units160 to 200 250I 330 300 AF(AV)@ ..
