| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5930 |
TOSHIBA|TOSHIBA |
N/a |
334000 |
 |
Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications |
2SC5930 , Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications
2SC5931 ,Silicon NPN triple diffusion mesa typeElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5938A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5946 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5966 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
30057 , Hybrid Couplers
30058 , STATIC SHIELDING BAG, OPEN TOP AND ZIPTOP
30058 , STATIC SHIELDING BAG, OPEN TOP AND ZIPTOP
