IC Phoenix
 
Home ›  2219 > 2SC5508-2SC5508T2-2SC5508-T2,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5508-2SC5508T2-2SC5508-T2 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SC5508RENESASN/a300000avaiNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5508NECN/a10100avaiNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5508T2NECN/a2930avaiNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
2SC5508-T2 |2SC5508T2日电NECN/a2190avaiNPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD


2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDFEATURES• Ideal for low-noise, high-gain amplification
2SC5508T2 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508-T2 ,NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLDPRELIMINARY DATA SHEETNPN SILICON RF TRANSISTOR2SC5508NPN SILICON RF TRANSISTORFOR LOW NOISE ..
2SC5508-T2B , NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION
2SC5515 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SK802 ,Fast switching N-channel silicon MOS field effect power transistor.F--=zabG-- "37 3 6427525 N E C ELECTRONICS INC 930 18958 D Fr N E c ELECTRONICS INC =13 DEIg ..
2SK808 ,Silicon N Channel Power FMOS FETFeaturesI Package Dimensions. Low ON resistance Ros (on) , Rus (on)=4.7n (typ.) Unit: mm0 High swit ..
2SK810 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FETN E C ELECTRONICS INC :ii)..ji-i.-:i.;..'ii,.i,ii'i.)./,..'. "r"). DEVICE th y..,.,.:..::: ..
2SK811 ,MOS FIELD EFFECT TRANSISTORN E C ELECTRONICS INC ‘15 DEIEH27525 UDLEFIEE Cl Mr .. - . .. -. --.-..-------------.-.----.- -- ..
2SK813 ,Fast switching N-channel silicon MOS field effect power transistor.6427525 N E C ELECTRONICS INC 980 18974 D 73/374! "16 DEIEHE‘?525 DULB‘IWI El r t tr/-IE'C') ..
2SK817 ,MOS FIELD EFFECT TRANSISTORFeatures IUrtittmml . " . ' . IosMAx 1.tMA.X " Suitable for switching pouer suppIIes, t.ttr.t . ..


2SC5508-2SC5508T2-2SC5508-T2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED