| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5477 |
MITSUBISHI |
N/a |
17100 |
 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
2SC5477-T112-1 IDC
2SC5477-T12 MITSUMI
2SC5477-T122 MITSUMI
2SC5477-T122 600MHz MITSUMI
2SC5477-T122-1 MITSUMI
2SC5477-T122-1 MIT
2SC5477-T122-1 ISAHAYA
2SC5477-T22-1 ISAHAYA
2SC5477 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5478 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5482 , For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
2SC5486 , TRANSISTOR
2SC5488 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK774 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C)
SYMBOL CHARACTERISTIC
Drain Leakage Current
Gate to ..
2SK784 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 "C)
SYMBOL CHARACTERISTIC . . . TEST CONDITIONS
loss Drai ..
2SK785 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
