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2SC5477-T12 MITSUMI N/a 3000



2SC5478 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5482 , For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
2SC5486 , TRANSISTOR
2SC5488 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5501 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK774 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C) SYMBOL CHARACTERISTIC Drain Leakage Current Gate to ..
2SK784 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 "C) SYMBOL CHARACTERISTIC . . . TEST CONDITIONS loss Drai ..
2SK785 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C) SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS ..
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