2SC5472 ,Silicon NPN epitaxial planer type(For low-voltage low-noise high-frequency oscillation)Absolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit1: BaseCollector to base voltage V 9 ..
2SC5477 , FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC5478 ,Silicon NPN triple diffusion mesa type(For horizontal deflection output)Absolute Maximum Ratings (T =25˚C) –nC0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Coll ..
2SC5482 , For Low Frequency Power Amplify Application Silicon NPN Epitaxial Type Micro
2SC5486 , TRANSISTOR
2SC5488 ,NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK772 ,N-Channel Junction Silicon FET AF Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK774 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C)
SYMBOL CHARACTERISTIC
Drain Leakage Current
Gate to ..
2SK784 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta = 25 "C)
SYMBOL CHARACTERISTIC . . . TEST CONDITIONS
loss Drai ..
2SK785 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS
..
2SK787 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET6427525 N E C ELECTRONICS INC 980 18938 D Trt-cs
'Ill DEI ELIE?SE5 Dnmaaaa i, I
NEG
ELECTR ..
2SK788 ,FIELD EFFECT TRANSISTORFEATURES:. Low orain-siource ON Resistance t RDS(ON)= 0,389 (Typ.). High Forward Transfer Admittanc ..
2SC5472
