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2SC5437-T1 |2SC5437T1NECN/a187910avaiReduced noise high frequency amplification transistor


2SC5437-T1 ,Reduced noise high frequency amplification transistorT SPRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-F ..
2SC5440 ,Power DeviceAbsolute Maximum Ratings T = 25°CC5.45±0.310.9±0.5Parameter Symbol Rating UnitCollector-base volta ..
2SC5440 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC5440 ,Power Deviceapplications (such as for airplanes, aerospace, automobiles, traffic control equipment,combustion e ..
2SC5445 , NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5453 ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK727 ,N-Channel Silicon Power MOS-FETFeatures IOutIine Drawings q High speed switching , ON?"v 4.5*oe 0 Low on-resistance 15.5..“ / ..
2SK727. ,N-Channel Silicon Power MOS-FETApplications 2.2 159mg . Switching regulators 'ii2'l, . U PS 1.5 5.45 o DC-DC converters OGene ..
2SK727-01 ,N-Channel Silicon Power MOS-FET2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES M
2SK735 ,FAST SWITCHING N-CHANNEL SILICON POWER MOS FET8427525 N E C ELECTRONICS INC 980 18905 D TC. 3&413 TI DE 5927525 [1l31dlt'irHii ie1lr" EClFiCATI ..
2SK736 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C) SYMBOL 980 18908 I=1 DE'EH27525EIDLEEIUEJ ll CH ..
2SK737 , N-channel MOS field effect power transistor.ELECTRICAL CHARACTERISTICS (Ta " 25 °C) SYMBOL CHARACTERISTIC . . . TEST CONDITIONS Drain to ..


2SC5437-T1

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