| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5384-T111-1C |
MITSUBISH |
N/a |
1747 |
 |
|
2SC5386 ,Silicon NPN Power Transistors TO-3P(H)IS packageAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5387 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONSAPPLICATIONS High Voltage : V = 1500 V CBOLow Saturation Voltage : V = 3 V (Max.) CE (sat)H ..
2SC5388 ,High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC5390 , Silicon NPN Epitaxial High Frequency Amplifier
2SC5392 ,For high breakdown voltage high-speed switchingElectrical Characteristics (T =25˚C)n CParameter Symbol Conditions min typ max UnitCollector cutof ..
2SK678 ,2SK678
2SK679 ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
2SK679A ,N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDS(on) = 1.0 n MAX. at VGS ---4.0 V, ID = 0.5 A
RDS(on) ..
