| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5383 |
MITSUBISHI |
N/a |
66900 |
 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type) |
2SC5383/LF MITSUMI
2SC5383-T111-1E MITSUMI
2SC5383-T111-1E MITSUBIS
2SC5383-T111-1E MITSUBISH
2SC5383-T111-1F
2SC5383-T111-1F MITUSBS
2SC5383-T111-1F MIT
2SC5383-T111-1F ISAHAYA
2SC5383-T11-1F SANYO
2SC5383-T311-1F MITSUBIS
2SC5384-T111-1C MITSUBISH
2SC5384-T111-1D 三菱
2SC5384-T111-1D ISAHAYA
2SC5384-T111-1D MIT
2SC5384-T11-1C(FC) MITSUBISHI
2SC5383 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
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2SK665 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK669 ,N-Channel Enhancement Silicon MOSFET Very High-Speed Switch, Analog Switch ApplicationsOrdering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Swit ..
