| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5283-T311-1F |
MITSUBISHI |
N/a |
9000 |
 |
|
2SC5288-T1 ,NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIERT-89DATA SHEETSILICON TRANSISTOR2SC5288NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER ..
2SC5289-T1 ,Mobile communications transmission power amplifierT-90DATA SHEETSILICON TRANSISTOR2SC5289NPN SILICON EPITAXIAL TRANSISTORFOR L-BAND LOW-POWER ..
2SC5291 ,NPN Epitaxial Planar Silicon Transistor High-Voltage Switching ApplicationsFeatures Package Dimensions• Adoption of FBET, MBIT processes. unit : mm• Large current capacity. 2 ..
2SC5291 ,NPN Epitaxial Planar Silicon Transistor High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltag ..
2SC5294 ,For horizontal deflection outputAbsolute Maximum Ratings (Ta=25˚C) –n0.7– 0.1Parameter Symbol Ratings Unit5.45– 0.3 5.45– 0.3Colle ..
2SK433 , FOR LOW FREQUENCY AMPLIFY APPLICATION N CHANNEL JUNCTION TYPE
2SK436 ,High-Frequency,Low-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta =25°C ' unitDrain-to-Source Voltage VDSS 15 VGate-to-Drain Voltage k ..
2SK439 , Silicon N-Channel MOS FET
