| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| 2SC5186-T1-A |
NEC|NEC |
N/a |
2715 |
 |
|
2SC5191 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORT88DATA SHEETSILICON TRANSISTOR2SC5191MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TR ..
2SC5192 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDT88DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTO ..
2SC5192-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLDT88DATA SHEETSILICON TRANSISTOR2SC5192MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTO ..
2SC5193 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLDT88DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EP ..
2SC5193-T1 ,MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLDT88DATA SHEETDATA SHEETSILICON TRANSISTOR2SC5193MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EP ..
2SK4017. ,Power MOSFET (N-ch single 30V<VDSS≤60V)Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 6.25 ° ..
2SK4021 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit Drain−source voltage ..
2SK4022 ,Power MOSFET (N-ch 150V<VDSS≤250V)Absolute Maximum Ratings (Ta = 25°C) 2.3 2.3 Characteristic Symbol Rating Unit 1 2 3 Drain-sour ..
